Low-Temperature Growth of Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Carbon nanotubes (CNTs) have been successfully grown at a temperature as low as 400 °C by grid-inserted plasma-enhanced chemical vapor deposition (PECVD). The grid and a thin double-layer catalyst of Fe (1 nm)/Ti (1 nm) were effective in growing the CNTs. The growth rates were 10 nm/min at 400 °C and 10 μm/min at 600 °C. The intensity ratios between G-peak and D-peak (G/D ratio) of the Raman scattering spectroscopy were almost the same for the CNTs grown at temperatures between 400 and 600 °C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
-
Kojima Yoshihiro
Department Of Chemistry Graduate School Of Science Hiroshima University
-
Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
-
Kishimoto Shigeru
Venture Business Laboratory, Nagoya University, Nagoya 464-8603, Japan
関連論文
- Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
- Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
- Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
- Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
- A questionnaire survey of hand dermatitis among Japanese nursing students
- Hand Dermatitis and Musculoskeletal Disorders among Female Nursing Students in Japan
- Effect of Ultrasonic Irradiation Parameters on the Supercooling Relaxation Behavior of PCM
- Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
- High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- A New Metabolite of Tryptophan, Chromopyrrolic Acid, Produced by Chromobacterium violaceum
- Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
- Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
- Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
- Thermal Expansion Coefficient of Boron Monophosphide
- Structures and Dielectric Properties in Thermochromic Nickel(II) Compounds
- Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
- Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
- Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
- Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
- Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
- THE MOTONEURONS INNERVATING THE MUSCULUS LEVATOR PALPEBRAE SUPERIORIS IN THE MONKEY, CAT AND RABBIT
- Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
- Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
- bcl-2 Expression on Prostate Cancer and its Relationship to Cell Cycle and Prognosis
- Atomic Force Microscopy and Kelvin Probe Force Microscopy Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
- AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
- Spin-crossover Change from Gradual to Abrupt Types for an Iron(III) Complex
- Multiple early bile duct carcinoma associated with congenital choledochal cyst
- Measurement of Cross-Sectional Potential of InAlAs/InGaAs Layered Structures in Vacuum by Kelvin Probe Force Microscopy
- High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
- Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride
- Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
- Measurement of Contact Potential of GaAs pn Junctions by Kelvin Probe Force Microscopy
- Measurement of Contact Potential of GaAs/AlGaAs Heterostructure Using Kelvin Probe Force Microscopy
- Effects of Sample Volume and Frequency on Ultrasonic Power in Solutions on Sonication
- Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate
- Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs
- Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
- Inhomogeneous Contact Potential Image of AlGaN/GaN Grown on Sapphire Substrate Measured by Kelvin Probe Force Microscopy : Semiconductors
- Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum (Special Issue : Solid State Devices and Materials (1))
- Estimation of Height of Barrier Formed in Metallic Carbon Nanotube (Special Issue : Solid State Devices and Materials (1))
- Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition
- Characterization of Carbon Nanotube FETs by Electrostatic Force Microscopy(Session3: Emerging Devices I)
- Fabrication of Vertically-Aligned Carbon Nanotube Electrodes Using Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Chemical Sensors
- Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Effects of Fabrication Process on Current–Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
- Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
- Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier
- Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
- Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
- Photoresponse of Carbon Nanotube Field-Effect Transistors
- AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator
- Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Evidence of Edge Conduction at Nanotube/Metal Contact in Carbon Nanotube Devices
- Fluidic Assembly of Thin GaAs Blocks on Si Substrates
- AlGaN/GaN High Electron Mobility Transistors with Inclined-Gate-Recess Structure
- Low-Temperature Growth of Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Factors Explaining Disability-free Life Expectancy in Japan: the Proportion of Older Workers, Self-reported Health Status, and the Number of Public Health Nurses
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors: Effect of Contamination Induced by Device Fabrication Process
- Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors