Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier

スポンサーリンク

概要

• 論文の詳細を見る

• We have investigated resonant-tunneling-injection photoluminescence (PL) of single InAs self-assembled quantum dots (QDs) which were embedded in the barrier layer of an n-GaAs/i-AlGaAs/n-GaAs tunneling diode. A triangular structure in the PL intensity-voltage characteristics of a single PL line was observed. This reflects the electron tunneling from a three-dimensional emitter to the zero-dimensional quantum level of the QD@. In addition, three subpeaks and a broad bulge of the PL were superimposed on the triangular structure. The subpeaks were ascribed to the resonant tunneling of holes into valence quantum levels of the QD@. The origin of the excess PL bulge which is obtained at off-resonance bias condition is also discussed.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-03-30

著者

• Kishimoto Shigeru

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Ohno Yutaka

  Department Of Information Science Faculty Of Engineering Kyoto University

• Maezawa Koichi

  Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic

• Mizutani Takashi

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Maezawa Koichi

  Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

関連論文

• Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
• Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
• Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
• Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
• Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
• Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
• Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
• A Verification Method for Formal Requirements Description
• Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
• A questionnaire survey of hand dermatitis among Japanese nursing students
• Hand Dermatitis and Musculoskeletal Disorders among Female Nursing Students in Japan
• Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
• High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
• Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
• CF_X (X=1-3) Radical Measurements in ECR Etching Plasma Employing C_4F_8 Gas by Infrared Diode Laser Absorption Spectroscopy
• CF_X(X=1-3) Radicals Controlled by On-Off Modulated Electron Cyclotron Resonance Plasma and Their Effects on Polymer Film Deposition ( Plasma Processing)
• Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
• Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
• Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
• Concurrent LISP and Its Interpreter
• Thermal Expansion Coefficient of Boron Monophosphide
• A Supporting System for Software Maintenance : Ripple Effect Analysis of Requirements Description Modification
• Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
• Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
• Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
• Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
• Software Design Process: Chrysalis Stage under the Control of Designers
• Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
• Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
• Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
• bcl-2 Expression on Prostate Cancer and its Relationship to Cell Cycle and Prognosis
• Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope
• Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
• Measurements of the CF, CF_2 and CF_3 Radicals in a CHF_3 Electron Cyclotron Resonance Plasma
• Atomic Force Microscopy and Kelvin Probe Force Microscopy Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
• AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
• Measurement of Cross-Sectional Potential of InAlAs/InGaAs Layered Structures in Vacuum by Kelvin Probe Force Microscopy
• High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
• Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition
• Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
• Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
• Excitation of Azimuthally Propagating Ion-Cyclotron Drift Waves in Large Magnetized Plasma : Nuclear Science, Plasmas and Electric Discharges
• Ion Cyclotron Drift Waves in Plasmas with Controlled Radial Density Distributions
• Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor
• Diffusion Process of Interstitial Atoms in an Electron Irradiated InP Studied by Transmission Electron Microscopy
• Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride
• Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
• Measurement of Contact Potential of GaAs pn Junctions by Kelvin Probe Force Microscopy
• Measurement of Contact Potential of GaAs/AlGaAs Heterostructure Using Kelvin Probe Force Microscopy
• ESR Study of Low Temperature Phase Transitions in Se Doped LiKSO_4
• Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate
• Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs
• Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy
• Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
• Inhomogeneous Contact Potential Image of AlGaN/GaN Grown on Sapphire Substrate Measured by Kelvin Probe Force Microscopy : Semiconductors
• Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum (Special Issue : Solid State Devices and Materials (1))
• Estimation of Height of Barrier Formed in Metallic Carbon Nanotube (Special Issue : Solid State Devices and Materials (1))
• Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition
• Characterization of Carbon Nanotube FETs by Electrostatic Force Microscopy(Session3: Emerging Devices I)
• Fabrication of Vertically-Aligned Carbon Nanotube Electrodes Using Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Chemical Sensors
• Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy
• Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Effects of Fabrication Process on Current–Voltage Characteristics of Carbon Nanotube Field Effect Transistors
• Contact Potential Measurement of Carbon Nanotube by Kelvin Probe Force Microscopy
• Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
• Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
• Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
• Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier
• Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
• Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
• Photoresponse of Carbon Nanotube Field-Effect Transistors
• AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator
• Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
• Evidence of Edge Conduction at Nanotube/Metal Contact in Carbon Nanotube Devices
• Fluidic Assembly of Thin GaAs Blocks on Si Substrates
• AlGaN/GaN High Electron Mobility Transistors with Inclined-Gate-Recess Structure
• Low-Temperature Growth of Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
• Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
• High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques
• Factors Explaining Disability-free Life Expectancy in Japan: the Proportion of Older Workers, Self-reported Health Status, and the Number of Public Health Nurses
• Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
• Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors: Effect of Contamination Induced by Device Fabrication Process
• High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques
• Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors
• High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques

もっと見る 閉じる

スポンサーリンク