Dielectric properties of extended defects in silicon studied by high-resolution transmission EELS

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概要

• 論文の詳細を見る
• Published for the Japanese Society of Electron Microscopy by Oxford University Pressの論文
• 1998-08-01

著者

• KOHNO Hideo

  Department of Physics, Osaka University

• Terauchi Masami

  Research Institute For Scientific Measurements Tohoku University

• Kohyama M

  Research Institute For Ubiquitous Energy Devices National Institute Of Advanced Industrial Science A

• Kohno Hideo

  Department Of Physics Osaka University

• Kohno Hideo

  Department Of Earth And Space Science Faculty Of Science Osaka University

• Takada Seiji

  Department Of Physics Osaka University

• Takeda Seiji

  Department Of Botany Graduate School Of Science Kyoto University

• Tanaka Michiyoshi

  Research Institute For Scientific Measurements Tohoku University

• Kohyama Masanori

  Department Of Material Physics Osaka National Research Institute

• MABUCHI Toshinobu

  Department of Physics, Graduate School of Science, Osaka University

• Mabuchi Toshinobu

  Department Of Physics Graduate School Of Science Osaka University

• KOHYAMA Masanori

  Department of Material Physics, Osaka National Research Institute

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