Improvement of the Interface Quality of the Al_2O_3/_<III>-Nitride Interface by (NH_4)_2S Surface Treatment for AlGaN/GaN MOSHFETs

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概要

• 論文の詳細を見る
• 2012-08-01

著者

• KISHIMOTO Shigeru

  the Department of Quantum Engineering, Nagoya University

• Mizutani Takashi

  The Department Of Quantum Engineering Nagoya University

• MIYAZAKI Eiji

  the Department of Quantum Engineering, Nagoya University

関連論文

• Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
• FOREWORD
• Improvement of the Interface Quality of the Al_2O_3/_-Nitride Interface by (NH_4)_2S Surface Treatment for AlGaN/GaN MOSHFETs

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