Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)

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概要

• 論文の詳細を見る

• This paper presents the device technology for monolithic integration of InP-based resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The potential of this technology for applications in quantum functional devices and circuits is demonstrated in two integration schemes in which RTDs and FETs are integrated either in parallel or in series. Based on the parallel integration scheme, we demonstrate an integrated device which exhibits negative differential resistance and modulated peak current. This integrated device forms the foundation of a new category of functional circuits featuring clocked supply voltage. Based on the series integration scheme, resonant-tunneling high electron mobility transistors (RTHEMTs) with novel current-voltage characteristics and useful circuit applications are demonstrated. The high-frequency characteristics of RTHEMTs are also reported.

• 社団法人電子情報通信学会の論文
• 1996-11-25

著者

• Chen Kevin

  Ntt Lsi Laboratories

• Chen K

  Ntt System Electronics Lab. Kanagawa Jpn

• Chen K.j.

  現在city University Of Hong Kong

• Yamamoto M

  Osaka Univ. Suita‐shi Jpn

• Yamamoto Masafumi

  Ntt Lsi Laboratories

• Maezawa Koichi

  Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University

• Maezawa Koichi

  Ntt Lsi Laboratories

• Chen Kevin

  City University of Hong Kong

• WAHO Takao

  NTT LSI Laboratories

• Waho T

  Ntt System Electronics Lab. Kanagawa Jpn

• Waho T

  Sophia Univ. Tokyo Jpn

• Waho T

  Department Of Electrical And Electronics Engineering Sophia University

• Yuda M

  Yonago National Coll. Technol. Tottori

• Maezawa K

  Graduate School Of Science And Engineering University Of Toyama

• Yamamoto Miki

  The Faculty Of Engineering Osaka University

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