Characterization of Lattice Sites and Compensation Mechanism in Heavily Si-Doped GaAs with Laser Raman Spectroscopy
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概要
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Lattice sites in heavily Si-doped GaAs have been investigated by means of Raman spectroscopy. Localized vibrational modes (LVM) due to Si_<Ga>-V_<Ga> complex and Si_<Ga> were observed as well as Si_<Ga>-Si_<As> pair and Si_<As> modes. Raman scattering efficiency was obtained from the spectrum area of each mode. The concentrations of these four Si-related sites were estimated, and the results indicate that the carrier compensation mechanism after annealing is dominated by Si_<Ga>-V_<Ga> acceptors and/or Si_<Ga>-Si_<As> neutral pairs depending on the annealing conditions. The compensation mechanism of the as-grown sample and Si-implanted GaAs has also been studied.
- 社団法人応用物理学会の論文
- 1990-02-20
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