Monostable-Bistable Transition Logic Elements (MOBILEs) Based on Monolithic Integration of Resonant Tunneling Diodes and FETs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Chen Kevin
Ntt Lsi Laboratories
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Maezawa Koichi
Ntt Lsi Laboratories
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Akeyoshi Tomoyuki
NTT LSI Laboratories
関連論文
- Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
- Reset-set flip-flop based on a novel approach to modulating resonant-tunneling current with FETs
- Monostable-Bistable Transition Logic Elements (MOBILEs) Based on Monolithic Integration of Resonant Tunneling Diodes and FETs
- Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- InP-Based High-Performance Monostable-Bistable Transistion Logic Element (MOBILE):an Intelligent Logic Gate Featuring Weighted-Sum Threshold Operations
- InP-Based High-Performance Monostable-Bistable Transition Logic elements (MOBILEs) Using Resonant-Tunneling Devices
- Threshold Logic Function on Both Positive and Negative Weighted Sums in Multiple-Input Monostable-Bistable Transition Logic Elements
- Monte Carlo Study of Charge Injection Transistors (CHINTs)
- Resonant Tunneling in a Novel Coupled-Quantum-Well Base Transistor
- Compensation Mechanism in Heavily Si-Doped GaAs Grown by MBE
- Characterization of Lattice Sites and Compensation Mechanism in Heavily Si-Doped GaAs with Laser Raman Spectroscopy
- Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Monte Carlo Simulation of Response Time for Velocity Modulation Transistors
- A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition
- High-Frequency Characteristics of Charge-Injection Transistor-Mode Operation in AlGaAs/InGaAs/GaAs Metal-Insulator-Semiconductor Field-Effect Transistors
- Analysis of Switching Time of Monostable-Bistable Transition Logic Elements Based on Simple Model Calculation
- Improvement of Ge/AlGaAs Air-Exposed Interfaces Grown by MBE and Their Application to n+-Ge Gate AlGaAs/GaAs MISFETs