Compositional Disordering of Focused-Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing

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概要

• 論文の詳細を見る

• Compositional disordering of focused-Si-implanted GaAs/Al_<0.5>Ga_<0.5>As superlattices, followed by rapid thermal annealing (RTA), was investigated by means of sputtering Auger electron spectroscopy (AES) and Raman spectroscopy. Complete disordering was found to take place in the superlattices focused-Si-implanted with a dose of 5×10^<15> cm^<-2> and annealed at 1000℃ for 4 to 30 seconds, resulting in an Al_<0.25>Ga_<0.75>As alloy. The Raman spectra showed that this alloy had a higher quality as the implanted samples were annealed for longer periods of time.

• 社団法人応用物理学会の論文
• 1987-12-20

著者

• UEMATSU Masashi

  NTT LSI Laboratories

• Yanagawa Fumihiko

  Ntt Lsi Laboratories

関連論文

• Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
• Growth Properties of Al_xGa_As Grown by MOVPE Using TEG and TMA
• Compensation Mechanism in Heavily Si-Doped GaAs Grown by MBE
• Compositional Disordering of Focused-Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing
• Characterization of Lattice Sites and Compensation Mechanism in Heavily Si-Doped GaAs with Laser Raman Spectroscopy

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