Electrical Properties of (CaSr)F_2/GaAs(111)B Interfaces Grown by Molecular Beam Epitaxy : Realization of Unpinning
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概要
- 論文の詳細を見る
Electrical properties of lattice-matched (Cars)F_2/ GaAs(111)B interfaces grown by molecular beam epitaxy (MBE) are investigated. C-V and ICTS results are presented that clearly indicate for the first time that the GaAs surface level is unpinned in metal/fluoride/GaAs (MIS) structures. The surface potential can be moved toward the conduction band edge up to E_c-0.1 eV. The minimum interface state density is estimate to be around 1×10^<11> eV^<-1> cm^<-2>. In contrast, strong pinning is observed for MIS diodes using (100)-oriented substrates or lattice-mismatched fluorides. The realization of unpinning and accumulation is attributed to interface coherence and dangling bond termination. The present analysis demonstrates that pinning-free GaAs MIS structures can be successfully achieved if the interface is prepared properly.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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WAHO Takao
NTT LSI Laboratories
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SAEKI Hideo
Department of Electrical Engineering, Keio University
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Saeki H
Nagaoka Univ. Technol. Nagaoka Jpn
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- Electrical Properties of (CaSr)F_2/GaAs(111)B Interfaces Grown by Molecular Beam Epitaxy : Realization of Unpinning