A Pseudopotential Approach to the Formation of Group IV Interstitial in III–V Semiconductors

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概要

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• Formation of neutral group IV interstitial atoms in III-V semiconductors is investigated using a pseudopotential perturbation approach. The interstitial sites of group IV atoms in III-V semiconductors are specified by the atomic volume ratio $\varOmega _{\text{IV}}/\varOmega _{\text{III-V}}$ and bulk modulus ratio $B_{\text{IV}}/B_{\text{III-V}}$ between III-V and IV semiconductors. The favored interstitial site is found to change from hexagonal to tetrahedral with an increase in $\varOmega_{\text{IV}}/\varOmega _{\text{III-V}}$ and decrease in $B_{\text{IV}}/B_{\text{III-V}}$. The calculated formation energies of group IV interstitial in III-V semiconductors imply that interstitial Sn is formed more easily than interstitial Si and Ge.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-01-20

著者

• Ito Tomonori

  Ntt Lsi Laboratories

• Ito Tomonori

  NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01

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