Oxygen Trap Hypothesis in Silicon Oxide
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概要
- 論文の詳細を見る
A hypothesis on the atomic structure of silicon oxide is proposed to explain the discrepancy between theoretical and experimental studies on the oxygen diffusion and the interfacial reaction during the thermal silicon oxidation process. The hypothesis says that silicon oxide contains "oxygen traps", in which the molecular oxygen can be located with almost 0 dissolving enthalpy. The density of the "traps" is ${\sim}10^{16}$ cm-3. A possible local structure is also proposed based on the first-principles calculations.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-15
著者
-
Akiyama Toru
Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo
-
Ito Tomonori
Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University
-
Kageshima Hiroyuki
Ntt Basic Research Laboratories
-
Uematsu Masahi
Ntt Basic Research Laboratories Ntt Corporation
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