Clustering and Transient Enhanced Diffusion of B Doping Superlattices in Silicon
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概要
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We have simulated the clustering and transient enhanced diffusion (TED) of boron profiles with superlattice structures. Using an analytical formula for B clustering in terms of the reaction between B atoms and supersaturated self-interstitials, we have satisfactorily fitted B TED profiles not only in the implantation-damaged regions but also deep in the bulk. In the simulation, we have also assumed TED reduction by C diffusion and self-interstitial trapping.
- 社団法人応用物理学会の論文
- 1999-08-15
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