Dislocation Velocities in Indium Phosphide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-04-05
著者
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Nagai Hisashi
Department Of Electrical Engineering Nagoya University
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Nagai H
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
関連論文
- Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine
- MBE Growth of High-Quality InP Using Triethylindium as an Indium Source
- β-phase Formation Behavior of Homogeneous Fe-Si Alloy Solidified in Short-Duration Microgravity
- Synthesis of Si-Ge Alloy by Rapid Cooling in Short-Duration Microgravity
- Thermal Conductivity Measurement of Molten Silicon by a Hot-Disk Method in Short-Duration Microgravity Environments
- Removal of Metallic Precipitates in Splat-Solidified CuInSe_2
- Microstructure of Splat-Solidified CuInSe_2
- Surface Morphology of YBa_2Cu_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition Using Liquid Sources
- Preparation of A-axis Oriented YBa_2Cu_3O_ Films by Metalorganic Chemical Vapor Deposition Using Liquid Sources
- Preparation of YBa_2Cu_3O_ Thin Films by Metal-Organic Chemical Vapor Deposition Using Liquid Sources
- High Purity Liquid Phase Epitaxial Growth of InP
- Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs
- Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga_In_As
- High-Purity LPE Growth of InP by Co Addition to an In-P Melt
- Growth of InP and InGaAs by MO-Chloride VPE
- Influence of Ambient Gas on the PL intensity from InP and GaAs : B-5: LASERS (2)
- Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- Effect of Baking Temperature on Purity of LPE Ga_In_As
- Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In_Ga_xAs_P_y on InP
- Dislocation Velocities in Indium Phosphide
- Asymmetric Interferogram in Polarization Interferometer