Influence of Ambient Gas on the PL intensity from InP and GaAs : B-5: LASERS (2)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-03-01
著者
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Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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NOGUCHI Yoshio
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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MIZUSHIMA Yoshihiko
Musashino Electrical Communication Laboratory, Nippon Tel
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Mizushima Yoshihiko
Musashino Electrical Communication Laboratory Nippon Tel
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Noguchi Yoshio
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Influence of Ambient Gas on the PL intensity from InP and GaAs : B-5: LASERS (2)
- Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
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- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
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- Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In_Ga_xAs_P_y on InP
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- New Instability Concept in Avalanche Diode Oscillation
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