Effect of Baking Temperature on Purity of LPE Ga_<0.47>In_<0.53>As
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概要
- 論文の詳細を見る
Liquid phase epitaxy (LPE) and the properties of high purity GaInAs layers on (100)InP substrates are reported. Low carrier concentration (3.8-5.4 × 10^<14>cm^<-3>) and high electron mobility (47000-51000 cm^2/V.s at 77 K) were obtained reproducibly. The influence of source Ga-In-As melt baking temperatures on the epitaxial layer purity was investigated. The results of a photoluminescence study and van der Pauw measurements show that acceptor impurities as well as donor impurities can be excluded from the source solution by a suitable heat treatment.
- 社団法人応用物理学会の論文
- 1981-11-05
著者
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Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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TAKAHEI Ken-ichiro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Amano Toshimasa
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Takahei Ken-ichiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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