Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In_<1-x>Ga_xAs_<1-y>P_y on InP
スポンサーリンク
概要
- 論文の詳細を見る
Liquid phase epitaxial (LPE) growth of In_<1-x>Ga_xAs_<1-y>P_y crystals lattice matched to InP was studied systematically with a controlled amount of supersaturation for whole range of composition at relatively low temperature (590℃). A region of extremely slow growth rate was found for the quaternary crystal with 1.35 μm band-gap and surfaces of quaternary layers became rough around 1.44μm. The growth rate of the crystals around 1.35μm was found to be relatively slow even when the growth temperature is 640℃. Comparison of these phenomena with those observed in AlGaAsSb system suggests the existence of immiscible region in this system below 600℃.
- 社団法人応用物理学会の論文
- 1981-04-05
著者
-
Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
-
Takahei Kenichiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
関連論文
- Influence of Ambient Gas on the PL intensity from InP and GaAs : B-5: LASERS (2)
- Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- Effect of Baking Temperature on Purity of LPE Ga_In_As
- Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In_Ga_xAs_P_y on InP
- Dislocation Velocities in Indium Phosphide