Liquid Phase Epitaxy of Si-Doped GaAs for Efficient Light Emitting Diodes

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概要

• 論文の詳細を見る

• The Si doped expitaxial growth of GaAs by the rolling boat method and the fabrication of efficient light emitting diodes are represented. During the growth on GaAs (111) B substrate, highly efficient diodes are obtained when the amount of Si added to 5 g of Ga is 6 mg and the Ga solution is baked at 910℃ for 1 hour prior to the growth. The highest power efficiency is 9.7 % for an uncoated flat diode. The epitaxial wafer uniformity depends upon whether growth spirals occur or not. The efficiency of light emitting diodes fabricated from a wafer with growth spirals varies from 〜2 to 〜9 %. On the other hand, that with no spirals varies from 〜6 to 〜9 %. The occurrence of the growth spirals can be controlled by changing the rolling start time.

• 社団法人応用物理学会の論文
• 1975-04-05

著者

• Maruyama Susumu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Amano Toshimasa

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Effect of Baking Temperature on Purity of LPE Ga_In_As
• Liquid Phase Epitaxy of Si-Doped GaAs for Efficient Light Emitting Diodes
• Surface Morphology of GaAs Layers Grown by Liquid-Phase Epitaxy
• GaAs_Sb_x(0.3

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