Surface Morphology of GaAs Layers Grown by Liquid-Phase Epitaxy

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概要

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• The surface morphology of liquid-phase epitaxial layers is discussed from the viewpoint of step kinetics.Macroscopic terraces on the grown surface are produced by the kinetic process of an advancing step train.An equation is deduced which gives the terrace size as a function of the surface binding energy.According to the present theory, when a substrate is bent concavely in the growth direction, the binding energy increases and hence the terrace size decreases.If the terrace size when a substrate is not bent is 31 μm, for example, the terrace size when bent concavely is calculated to be less than 0.1 μm, under the same growth conditions.This means the growth surface (e.g.cellular)is transformed into a smoother one (e.g.wave- or mirror-like)by wafer bending. In this paper, the origins of cellular, wave-like, and mirror-like morphologies and their relations are discussed.

• 社団法人応用物理学会の論文
• 1979-07-05

著者

• Maruyama Susumu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Liquid Phase Epitaxy of Si-Doped GaAs for Efficient Light Emitting Diodes
• Surface Morphology of GaAs Layers Grown by Liquid-Phase Epitaxy
• GaAs_Sb_x(0.3

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