GaAs_<1-x>Sb_x(0.3<x<0.9) Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-10-05
著者
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Waho Takao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Maruyama Susumu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ogawa Shigeo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Experimental Integration Technology for Josephson Tunneling Switching Devices : C-1: JOSEPHSON DEVICES
- Surface Structure of GaAs_Sb_x Grown by Molecular Beam Epitaxy
- Liquid Phase Epitaxy of Si-Doped GaAs for Efficient Light Emitting Diodes
- Surface Morphology of GaAs Layers Grown by Liquid-Phase Epitaxy
- GaAs_Sb_x(0.3