Behavior of the Schottky-Barrier Diode under Uniaxial Stress

概要

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The stress effect of a Schottky-barrier diode was examined at low stress levels of 10^7〜10^8 dyn/cm^2. For stress-sensitization such treatments as incorporation of mechanical strain, golddoping or gamma-ray irradiation were very effective. By the sensitizing treatment additional new states were introduced, and the equivalent surface recombination was greatly enhanced so that associated minority carriers were introduced by a change in the stress. Stress-induced excess currents were ohmic and temperature insensitive. Little barrier height lowering at these stress levels was observed. The mechanism of the stress effect is such that the stress changes the rate of carrier generation or recombination at the interface of the metal-semiconductor contact and induces the excess minority currents. The relevant center is the surface states and lies at the Fermi level of the metal.
社団法人応用物理学会の論文
1974-01-05