Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits : B-4: OPTOELECTRONIC DEVICES
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Urisu Tsuneo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Mizushima Yoshihiko
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Mizushima Yoshihiko
Musashino Electrical Communication Laboratory Nippon Tel
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Sugeta Takayuki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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SAKATA Seizo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Sakata Seizo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Influence of Ambient Gas on the PL intensity from InP and GaAs : B-5: LASERS (2)
- Angstroms Resolution in Se-Ge Inorganic Photoresists
- Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed Diodes
- Simplified Theory of Mode-Locking Process for Evaluating SHG Autocorrelation Pulse Width
- Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits : B-4: OPTOELECTRONIC DEVICES
- High Speed Photoresponse Mechanism of a GaAs-MESFET
- In_xGa_As Injection Lasers
- Behavior of the Schottky-Barrier Diode under Uniaxial Stress
- New Instability Concept in Avalanche Diode Oscillation