Removal of Metallic Precipitates in Splat-Solidified CuInSe_2
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 1999-12-01
著者
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Nagai Hideaki
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Nagai Hisashi
Department Of Electrical Engineering Nagoya University
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Ohnuki Somei
Division Of Materials Science Graduate School Of Engineering Hokkaido University
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Ohnuki Somei
Laboratory Of Advanced Materials Department Of Materials Engineering Faculty Of Engineering Hokkaido
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Nagai H
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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IKEZAWA Kazuhiro
Laboratory of Advanced Materials, Department of Materials Engineering Faculty of Engineering, Hokkai
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NAGAI Hideaki
Materials Division, Hokkaido National Industrial Research Institute
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SUZUKI Masaaki
Materials Division, Hokkaido National Industrial Research Institute
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OKUTANI Takeshi
Materials Division, Hokkaido National Industrial Research Institute
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IKEZAWA Kazuhiro
Hokkaido University.
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Okutani Takeshi
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Suzuki M
Materials Divison Hokkaido National Industrial Research Institute
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Ohnuki Somei
Laboratory Of Advanced Materials Department Of Materials Engineering Faculty Of Engineering Hokkaido University
関連論文
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- β-phase Formation Behavior of Homogeneous Fe-Si Alloy Solidified in Short-Duration Microgravity
- Synthesis of Si-Ge Alloy by Rapid Cooling in Short-Duration Microgravity
- Thermal Conductivity Measurement of Molten Silicon by a Hot-Disk Method in Short-Duration Microgravity Environments
- Removal of Metallic Precipitates in Splat-Solidified CuInSe_2
- Microstructure of Splat-Solidified CuInSe_2
- Surface Morphology of YBa_2Cu_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition Using Liquid Sources
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- Preparation of YBa_2Cu_3O_ Thin Films by Metal-Organic Chemical Vapor Deposition Using Liquid Sources
- High Purity Liquid Phase Epitaxial Growth of InP
- Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs
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- High-Purity LPE Growth of InP by Co Addition to an In-P Melt
- Growth of InP and InGaAs by MO-Chloride VPE
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