Microstructure of Splat-Solidified CuInSe_2
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 1999-07-20
著者
-
Nagai Hideaki
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
-
Nagai Hisashi
Department Of Electrical Engineering Nagoya University
-
Ohnuki Somei
Division Of Materials Science Graduate School Of Engineering Hokkaido University
-
Ohnuki Somei
Laboratory Of Advanced Materials Department Of Materials Engineering Faculty Of Engineering Hokkaido
-
Nagai H
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
-
Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
-
Nakata Y
Fujitsu Laboratories Ltd.
-
NAGAI Hideaki
Materials Division, Hokkaido National Industrial Research Institute
-
SUZUKI Masaaki
Materials Division, Hokkaido National Industrial Research Institute
-
OKUTANI Takeshi
Materials Division, Hokkaido National Industrial Research Institute
-
IKEZAWA Kazuhiro
Hokkaido University.
-
NAKATA Yoshinori
Materials Divison, Hokkaido National Industrial Research Institute
-
Okutani Takeshi
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
-
Suzuki M
Materials Divison Hokkaido National Industrial Research Institute
-
Ohnuki Somei
Laboratory Of Advanced Materials Department Of Materials Engineering Faculty Of Engineering Hokkaido University
関連論文
- Nano-Sized Hollow Bump Array Generated by Single Femtosecond Laser Pulse
- Transfer of Laser Dye by Laser-Induced Forward Transfer : Optics and Quantum Electronics
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Structure Analysis of δ-phase in Sb-Te Alloys by HRTEM
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine
- MBE Growth of High-Quality InP Using Triethylindium as an Indium Source
- Laser Spectroscopic Diagnostics of Laser-Ablation Processes Used for Thin Film Deposition〔含 コメント〕
- β-phase Formation Behavior of Homogeneous Fe-Si Alloy Solidified in Short-Duration Microgravity
- Synthesis of Si-Ge Alloy by Rapid Cooling in Short-Duration Microgravity
- Thermal Conductivity Measurement of Molten Silicon by a Hot-Disk Method in Short-Duration Microgravity Environments
- Removal of Metallic Precipitates in Splat-Solidified CuInSe_2
- Microstructure of Splat-Solidified CuInSe_2
- Surface Morphology of YBa_2Cu_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition Using Liquid Sources
- Preparation of A-axis Oriented YBa_2Cu_3O_ Films by Metalorganic Chemical Vapor Deposition Using Liquid Sources
- Preparation of YBa_2Cu_3O_ Thin Films by Metal-Organic Chemical Vapor Deposition Using Liquid Sources
- High Purity Liquid Phase Epitaxial Growth of InP
- Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs
- Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga_In_As
- High-Purity LPE Growth of InP by Co Addition to an In-P Melt
- Growth of InP and InGaAs by MO-Chloride VPE
- Analysis of Light-Induced Degradation in Amorphous Silicon Alloy Solar Cells and Its Application to Accelerated Test Method
- Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
- Structural Analysis of Ag-In-Sb-Te Phase-Change Material(Optics and Quantum Electronics)
- Metastable Defect Cluster Formation during Radiation-Induced Amorphization in NiTi
- Atomistic observation and simulation analysis of spatiotemporal fluctuations during radiation-induced amorphization
- Dynamical Study of Spatio-Temporal Structural Fluctuations in the Intermetallic Compound Nickel-Titanium during Radiation-Induced Crystalline-to-Amorphous Transformation
- Formation and Stability of Metallic Silicides during Ion-Beam-Mixing in the Systems of Mo/Si and Ti/Si
- A Preliminary Experiment of Volatilization of Minerals in Coal Ash by Chlorination Treatment
- Phase transformation of zirconia ceramics by hydrothermal degradation
- Phase Characterization of Re-Based Diffusion Barrier Layer on Nb Substrate
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- Phase transformation of zirconia ceramics by hydrothermal degradation
- Dislocation Velocities in Indium Phosphide
- Asymmetric Interferogram in Polarization Interferometer