Thermal Conductivity Measurement of Molten Silicon by a Hot-Disk Method in Short-Duration Microgravity Environments
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-03-15
著者
-
Nagai Hideaki
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
-
Nagai Hisashi
Department Of Electrical Engineering Nagoya University
-
Nagai H
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
-
Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
-
Nakata Y
Fujitsu Laboratories Ltd.
-
MINAGAWA Hideki
Microgravity Materials Laboratory, National Institute of Advanced Industrial Science and Technology
-
KAMADA Keiji
Japan Space Utilization Promotion Center
-
TSURUE Takashi
Microgravity Materials Laboratory, National Institute of Advanced Industrial Science and Technology
-
NAGAI Hideaki
Hokkaido National Industrial Research Institute(HNIRI)
-
NAKATA Yoshinori
Hokkaido National Industrial Research Institute(HNIRI)
-
TSURUE Takashi
Hokkaido National Industrial Research Institute(HNIRI)
-
MINAGAWA Hideki
Hokkaido National Industrial Research Institute(HNIRI)
-
GUSTAFSSON Silas
Department of Physics, Chalmers Institute of Technology
-
OKUTANI Takeshi
Hokkaido National Industrial Research Institute(HNIRI)
-
Kamada K
Japan Space Utilization Promotion Center
-
Tsurue Takashi
Microgravity Materials Laboratory National Institute Of Advanced Industrial Science And Technology
-
Okutani Takeshi
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
-
Minagawa Hideki
Hokkaido National Industrial Research Institute Agency Of Industry And Science Technology Ministry O
-
Minagawa H
Aist Sapporo Jpn
-
Gustafsson Silas
Department Of Physics Chalmers Institute Of Technology
関連論文
- Nano-Sized Hollow Bump Array Generated by Single Femtosecond Laser Pulse
- Transfer of Laser Dye by Laser-Induced Forward Transfer : Optics and Quantum Electronics
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Characteristics of Cleaning and Carbonizing Plasmas in TEXTOR
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Gas Desorption Analysis on the Surface of ZnO(0001^^-) after Hydrogen Ion Irradiation
- Compositional Change of Silicon Carbide Surface due to Oxygen Adsorption and Heat Treatment
- Three-Dimensional (3D) High-Frequency Ultrasound Images of Skin and Eye
- Three Dimensional Endoscopic Image of a Blood Vessel Using High Frequency Ultrasound
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Structure Analysis of δ-phase in Sb-Te Alloys by HRTEM
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine
- MBE Growth of High-Quality InP Using Triethylindium as an Indium Source
- Laser Spectroscopic Diagnostics of Laser-Ablation Processes Used for Thin Film Deposition〔含 コメント〕
- β-phase Formation Behavior of Homogeneous Fe-Si Alloy Solidified in Short-Duration Microgravity
- Synthesis of Si-Ge Alloy by Rapid Cooling in Short-Duration Microgravity
- Thermal Conductivity Measurement of Molten Silicon by a Hot-Disk Method in Short-Duration Microgravity Environments
- Removal of Metallic Precipitates in Splat-Solidified CuInSe_2
- Microstructure of Splat-Solidified CuInSe_2
- Surface Morphology of YBa_2Cu_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition Using Liquid Sources
- Preparation of A-axis Oriented YBa_2Cu_3O_ Films by Metalorganic Chemical Vapor Deposition Using Liquid Sources
- Preparation of YBa_2Cu_3O_ Thin Films by Metal-Organic Chemical Vapor Deposition Using Liquid Sources
- High Purity Liquid Phase Epitaxial Growth of InP
- Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs
- Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga_In_As
- High-Purity LPE Growth of InP by Co Addition to an In-P Melt
- Growth of InP and InGaAs by MO-Chloride VPE
- Analysis of Light-Induced Degradation in Amorphous Silicon Alloy Solar Cells and Its Application to Accelerated Test Method
- Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
- Structural Analysis of Ag-In-Sb-Te Phase-Change Material(Optics and Quantum Electronics)
- Quasi-Static and Dynamic Density Fluctuations in the Glassy State. I. : Speckle Patterns and Background Scattering
- A Preliminary Experiment of Volatilization of Minerals in Coal Ash by Chlorination Treatment
- Control of Levitation in Electromagnetic Levitators under Microgravity
- Preparation of Tb-Fe giant magnetostrictive alloys under microgravity conditions
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- Dislocation Velocities in Indium Phosphide
- Asymmetric Interferogram in Polarization Interferometer