Characterization of the Depth Profile of Electrically Activated Ion-Implanted Impurities by X-ray Photoelectron Spectroscopy and Anodic Oxidation

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概要

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• A new technique for obtaining the depth profile of electrically activated ion-implanted impurities in silicon has been developed. This technique consists of X-ray photoelectron spectroscopy (XPS) and a combination of anodic oxidation and chemical removal of the oxide. By applying this technique to analyse As^+- and B^+-implanted silicon, the positive shift and the negative shift of Si 2p photoelectron spectra were observed for As^+- and B^+-implanted silicon, respectively. Furthermore, the depths of the maximum energy peak shifts of Si 2p photoelectron spectra are almost coincident with those of the maximum impurity concentrations measured by Secondary ion mass spectrometry (SIMS). These results show that the depth profile of the energy peak shift of Si 2p photoelectron spectra is strongly correlated with that of electrically activated implanted impurities.

• 社団法人応用物理学会の論文
• 1999-01-15

著者

• FUJII Shinji

  ULSI Process Technology Development Center, Matsushita Electronics Corporation

• Fujii Shinji

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

関連論文

• Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
• Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
• Characterization of the Depth Profile of Electrically Activated Ion-Implanted Impurities by X-ray Photoelectron Spectroscopy and Anodic Oxidation

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