FUJII Takuya | Fujitsu Laboratories Lid.
スポンサーリンク
概要
関連著者
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FUJII Takuya
Fujitsu Laboratories Lid.
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YAMAMOTO Tsuyoshi
Fujitsu Laboratories Ltd.
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Ishida Toru
Materials And Components Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Fukuma T
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Fujii T
Japan Telecom Co. Ltd. Tokyo Jpn
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Fujii T
Nikon Corporation
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Yamada M
Mitsubishi Electric Corp. Itami‐shi Jpn
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FUJII Toru
Nikon Corporation
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Yamada Minoru
Faculty of Health Sciences, Kobe University School of Medicine
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Ishikawa Tsutomu
Fujitsu Laboratories Lid.
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Ishikawa Toshihiro
The Telecom Research Lab. Matsushita Communication Ind. Co. Ltd.
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Ishida T
Osaka Prefecture Univ. Sakai‐shi Jpn
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HIGASHI Toshio
Fujitsu Laboratories Lid.
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SODA Haruhisa
Fujitsu Laboratories Lid.
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Ishikawa T
Microwave Device Development Department Mitsubishi Electric Corporation
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Fujii Takuya
Fujitsu Laboratories Ltd.
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Fujii T
Department Of Electronic Science And Engineering Kyoto University
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Soda H
Fujitsu Laboratories Lid.
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Yamamoto T
Graduate School Of Information Science And Technology Hokkaido University
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Yamada M
Kanazawa Univ. Kanazawa‐shi Jpn
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Yamada Minoru
Faculty Of Engineering Kanazawa University
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NOBUHARA Hiroyuki
Fujitsu Laboratories Ltd.
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EKAWA Mitsuru
Fujitsu Limited and Fujitsu Laboratories, Limited
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Tanaka Kazuhiro
FUJITSU LABORATORIES LTD.
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Wakao Kiyohide
FUJITSU LABORATORIES LTD.
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Tanaka K
Kddi R&d Laboratories Inc.
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Inoue Tadao
Fujitsu Laboratories Ltd.
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Ekawa M
Fujitsu Laboratories Ltd.
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Ekawa Mitsuru
Fujitsu Laboratories Ltd.
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Wakao K
Fujitsu Laboratories Ltd.
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Nobuhara H
Fujitsu Laboratories Ltd.
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Nobuhara Hiroyuki
Fujitsu Laboratories Limited
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FUJII Takuya
Fujitsu Laboratories Ltd.,
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Ekawa Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
著作論文
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Well Width Dependence of Threshold Current Density in Tensile-Strained InGaAs/lnGaAsP Quantum-Well Lasers
- Two-Dimensional Island Based Model for Self-Inducing Quantum Dots