Well Width Dependence of Threshold Current Density in Tensile-Strained InGaAs/lnGaAsP Quantum-Well Lasers
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概要
- 論文の詳細を見る
We investigated how the well width affected threshold current density in tensile-strained InGaAs/InGaAsP quantum well lasers. Lasers with wider wells had lower threshold current densities, independent of the cavitylength. This is mainly caused by the reduction of the transparent current density.
- 社団法人応用物理学会の論文
- 1994-11-15
著者
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YAMAMOTO Tsuyoshi
Fujitsu Laboratories Ltd.
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NOBUHARA Hiroyuki
Fujitsu Laboratories Ltd.
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Tanaka Kazuhiro
FUJITSU LABORATORIES LTD.
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Wakao Kiyohide
FUJITSU LABORATORIES LTD.
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Tanaka K
Kddi R&d Laboratories Inc.
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FUJII Takuya
Fujitsu Laboratories Lid.
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Inoue Tadao
Fujitsu Laboratories Ltd.
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Fujii Takuya
Fujitsu Laboratories Ltd.
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Wakao K
Fujitsu Laboratories Ltd.
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Nobuhara H
Fujitsu Laboratories Ltd.
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Nobuhara Hiroyuki
Fujitsu Laboratories Limited
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FUJII Takuya
Fujitsu Laboratories Ltd.,
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