Two-Dimensional Island Based Model for Self-Inducing Quantum Dots

スポンサーリンク

概要

• 論文の詳細を見る

• We propose a thermodynamic model which describes the formation of self-inducing quantum dots from two-dimensional islands. We assumed that the migrating atoms on the substrate surface can exist only on the surface lattice sites away from the two-dimensional islands. With this assumption, there is a maximum size of the two-dimensional islands in equilibrium with the migrating atoms. A source supply on the surface, after the islands reach the maximum size, causes size reduction of the two-dimensional islands. This size reduction induces the first-order phase transition of the two-dimensional islands to quantum dots.

• 社団法人応用物理学会の論文
• 1996-12-01

著者

• EKAWA Mitsuru

  Fujitsu Limited and Fujitsu Laboratories, Limited

• FUJII Takuya

  Fujitsu Laboratories Lid.

• Fujii Takuya

  Fujitsu Laboratories Ltd.

• Ekawa M

  Fujitsu Laboratories Ltd.

• Ekawa Mitsuru

  Fujitsu Laboratories Ltd.

• Ekawa Mitsuru

  Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

関連論文

• Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
• Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• Well Width Dependence of Threshold Current Density in Tensile-Strained InGaAs/lnGaAsP Quantum-Well Lasers
• Two-Dimensional Island Based Model for Self-Inducing Quantum Dots
• Low Noise Figure (6.3 dB) Polarization Insensitive Spot-Size Converter Integrated Semiconductor Optical Amplifier(Special Issue on Recent Progress of Integrated Photonic Devices)
• Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
• Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
• Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)

スポンサーリンク