Determination of Built-In Electric Field Strength in InP/n^+-InP Structures Using Photoellipsometry
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概要
- 論文の詳細を見る
Photoellipsometry, a nondestructive and contactless optical method, was applied to InP/n^+-InP structures. Three InP/n^+-InP samples were studied, each containing an undoped InP layer of thickness L (L=40, 100, and 150 nm, respectively) epitaxially grown on top of a heavily doped n-InP substrate. The measured spectra were analyzed using the Franz-Keldysh theory, in which the effects of broadining and contributions from the heavy and light holes were included. Our main objective was to determine the built-in electric field strength in the top layer of each given sample. The results of our analysis not only verify that a uniform built-in field was present in the top layer but also suggest that the surface Fermi level was pinned at a fixed position for each sample studied. In addition, a small downward shift of the band-gap energy was observed in the three InP samples. We believe that this type of shift is due to the field-induced effect on the sample materials.
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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XIONG Yi-Ming
Division of Electronic and Information Engineering, Tokyo University of Agriculture and Technology
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Xiong Yi-ming
Division Of Electronic And Information Engineering Tokyo University Of Agriculture And Technology
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Saitoh Tadashi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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NAKAMURA Kensaku
Division of Electronic and Information Engineering, Tokyo University of Agriculture and Technology
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Nakamura Kensaku
Division Of Electronic And Information Engineering Tokyo University Of Agriculture And Technology
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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