Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
スポンサーリンク
概要
- 論文の詳細を見る
The potential modulation and interface states of Al2O3/Al0.25Ga0.75N/GaN structures prepared by atomic layer deposition (ALD) were characterized by capacitance--voltage ($C$--$V$) measurements. We observed the peculiar $C$--$V$ characteristics with two capacitance steps in forward and reverse bias regions, corresponding to the electron accumulation or depletion behavior at the Al2O3/AlGaN and AlGaN/GaN interfaces. From the experimental and calculated $C$--$V$ characteristics, it was found that the charging and discharging of interface states near the AlGaN conduction-band edge mainly caused the stretch-out and hysteresis of the $C$--$V$ curve at the forward bias. On the other hand, it is likely that the interface states near the midgap or deeper in energies act as fixed charges. From the bias-dependent hysteresis voltage in the forward bias region and the photo-induced voltage shift at the reverse bias, we estimated the interface state density distribution at the Al2O3/AlGaN interface for the first time. The present ALD-Al2O3/AlGaN/GaN structure showed relatively high interface state densities with a minimum density of $1\times 10^{12}$ cm-2 eV-1 or higher.
- 2011-02-25
著者
-
HASHIZUME Tamotsu
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
-
Hori Yujin
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
-
Miczek Marcin
Silesian University of Technology, Institute of Physics, Department of Applied Physics, Krzywoustego 2, 44-100 Gliwice, Poland
-
Mizue Chihoko
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
-
Hashizume Tamotsu
Graduate School of Electronics and Information Engineering and Research Center for
関連論文
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
- Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
- Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation
- Effects of Cl?-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al?O?/AlGaN/GaN Heterostructures
- Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
- Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
- Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
- Effects of Cl_2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al_2O_3/AlGaN/GaN Heterostructures