Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation

スポンサーリンク

概要

• 論文の詳細を見る

• A selective electrochemical oxidation has been applied to the AlGaN surface to fabricate a recessed-oxide-gate structure for normally-off AlGaN/GaN high-electron-mobility transistors (HEMTs). We observed bias-dependent oxidation current characteristics peculiar to the AlGaN/GaN heterostructure. A flat interface between the oxide and AlGaN was confirmed by cross-sectional transmission electron microscopy. The selective formation of the recessed oxide allowed the local depletion of two-dimensional electron gas at the AlGaN/GaN interface and thus the achievement of normally-off operation. The recessed-oxide-gate HEMT with the oxide thickness of 20 nm showed good gate control of drain current with the threshold voltage of +1.2 V.

• 2011-02-25

著者

• Hori Yujin

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Ohi Kota

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Harada Naohisa

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Azumaishi Naoki

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Hashizume Tamotsu

  CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan

関連論文

• Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
• Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
• Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation
• Effects of Cl?-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al?O?/AlGaN/GaN Heterostructures
• Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
• Effects of Cl_2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al_2O_3/AlGaN/GaN Heterostructures

スポンサーリンク