Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

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概要

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• We have investigated the effects of thin native oxide layers on the AlGaN surface on the DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). After HEMT fabrication, the AlGaN surface between the electrodes was intentionally oxidized using either O2 or N2O plasma. X-ray photoelectron spectroscopy (XPS) analysis showed that both methods produced a native oxide of AlGaN with a thickness of about 1 nm and that an N–O chemical bond was present in the N2O plasma oxide. We observed pronounced degradation in the DC characteristics and current collapse in the HEMT with O2 plasma oxidation. In contrast, the formation of native oxide by the N2O plasma had no effect on the DC characteristics or current stability of the AlGaN/GaN HEMT. Possible mechanisms for device degradation were discussed in terms of stress and deep levels in the AlGaN layer induced by oxide formation or oxygen incorporation.

• 2009-02-25

著者

• Hashizume Tamotsu

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Hashizume Tamotsu

  Graduate School of Electronics and Information Engineering and Research Center for

• Tajima Masafumi

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Kotani Junji

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

関連論文

• Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
• Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
• Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
• Effects of Cl?-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al?O?/AlGaN/GaN Heterostructures
• Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
• Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
• 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
• Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
• Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
• Effects of Cl_2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al_2O_3/AlGaN/GaN Heterostructures

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