Degradation of Se-Doped GaAs_<0.6>P_<0.4> Light-Emitting Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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Sato Tadashige
Mitsubishi Chemical Corporation
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IMAI Megumi
Mitsubishi Chemical Corporation
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Sato T
Mitsubishi Chemical Corporation
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Sat0 Taketomo
Research Center For Integrated Quantum Electronics Hokkaido University
関連論文
- Characteristics of Nitrogen-Doped GaAsP Light-Emitting Diodes
- Degradation of Se-Doped GaAs_P_ Light-Emitting Diodes
- Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots