Fine Structures of Fe-Related Deep Levels in GaAsP

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概要

• 論文の詳細を見る

• The capacitance transients caused by hole emissions from Fe-related deep levels were measured in GaAs and GaAs_<0.77>P_<0.23> at different temperatures Non-exponential transients were investigated under different conditions and found to relate to the alloy random effect. The transients were decomposed using a Laplace defect spectroscope(LDS). The three well-resolved sharp peaks in the LDS spectra of GaAs_<0.77>P_<0.23> were assigned to the fine structures of the Fe-related deep levels. The activation energy differences of the fine structures were determined by linear futting of the slopes of temperature dependences of hole emission rates. The results suggest that the local composition fluctuation in the nearest neighbors of Fe atoms is likely to be responsible for the fine structures.

• 社団法人応用物理学会の論文
• 2000-04-30

著者

• HUANG Qisheng

  Department of Physics, Xiamen University

• Huang Q

  Inst. Physics Chinese Acad. Sci. Beijing Chn

• KANG Junyong

  Department of Physics, Xiamen University

• ZHAN Huahan

  Department of Physics, Xiamen University

• Zhan Huahan

  Department Of Physics Xiamen University

• Kang J

  Samsung Advanced Inst. Technol. Suwon Kor

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• Fine Structures of Fe-Related Deep Levels in GaAsP
• Fine Structures of Fe-Related Energy Levels in GaAsP

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