Role of Zn Impurities in CuGaS_2 at Relatively Low Concentrations Revealed by Photoluminescence Measurements

概要

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Photoluminescence spectra were studied for Zn-doped CuGaS_2 crystals prepared by the iodine transport method from sources satisfying the (CuGaS_2)_<1-x>-(2ZnS)_x (x=0.00025, 0.0005) relation. These crystals showed three donor-acceptor pair emissions. Analyses of the time-resolved spectra during decays of these emissions indicated the existence of several isolated levels, i.e., a common shallower level of 〜70 meV and three deeper levels of 〜120, 〜155 and 〜204 meV. Considering the possible defect formations in the crystals under the present preparation condition, the origin assignments of these levels were made as follows. The level of 〜70 meV and that of 〜120 meV are due to Zn_<Cu> donors and Zn_<Ga> acceptors, respectively. One of the levels of 〜155 and 〜204 meV is due to Zn_<Cu>-V_<Ga> acceptors and the other is due to V_<Ga> acceptors.
社団法人応用物理学会の論文
1990-08-20