Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

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We report the intrinsic critical current density ($J_{\text{c0}}$) in current-induced magnetization switching and the thermal stability factor ($E/k_{\text{B}}T$, where $E$, $k_{\text{B}}$, and $T$ are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2 nm)/Ru(0.7–2.4 nm)/Co40Fe40B20(2 nm) synthetic ferrimagnetic (SyF) free layer. We show that $J_{\text{c0}}$ and $E/k_{\text{B}}T$ can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski’s model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced $J_{\text{c0}}$ without reducing high $E/k_{\text{B}}T$.
2006-10-25