Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-10-25
著者
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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HAYAKAWA Jun
Advanced Research Laboratory, Hitachi, Ltd.
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SASAKI Ryutaro
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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MEGURO Toshiyasu
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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MATSUKURA Fumihiro
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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OHNO Hideo
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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Lee Young
Laboratory For Nanoelectronics And Spintronics Riec Tohoku Univ.
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Sasaki Ryutaro
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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Matsukura Fumihiro
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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TAKAHASHI Hiromasa
Advanced Research Laboratory, Hitachi, Ltd.
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