Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers
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概要
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The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature ($T_{\text{a}}$) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-$T_{\text{a}}$ annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side.
- 2011-02-25
著者
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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HAYAKAWA Jun
Advanced Research Laboratory, Hitachi, Ltd.
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Miura Katsuya
Laboratory For Nanoelectronics And Spintronics Research Institute Of Electrical Communication Tohoku
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Matsukura Fumihiro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Yamamoto Hiroyuki
Advanced Research Institute For Science And Engineering Waseda University
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Yamanouchi Michihiko
Center For Spintronics Integrated Systems Tohoku University
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Mizunuma Kotaro
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Gan Hua-Dong
Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan
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Matsukura Fumihiro
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Sato Hideo
Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan
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Ikeda Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Sato Hideo
Center for Spintronics Integrated Systems, Tohoku University
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