Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
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概要
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Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities $J_{\text{c}}$ required for current-driven switching in samples annealed at 270 and 300°C are found to be as low as $7.8\times 10^{5}$ and $8.8\times 10^{5}$ A/cm2 with accompanying tunnel magnetoresistance (TMR) ratios of 49 and 73%, respectively. Further annealing of the samples at 350°C increases TMR ratio to 160%, while accompanying $J_{\text{c}}$ increases to $2.5\times 10^{6}$ A/cm2. We attribute the low $J_{\text{c}}$ to the high spin-polarization of tunnel current and small $M_{\text{s}}V$ product of the CoFeB single free layer, where $M_{\text{s}}$ is the saturation magnetization and $V$ the volume of the free layer.
- Japan Society of Applied Physicsの論文
- 2005-09-10
著者
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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HAYAKAWA Jun
Advanced Research Laboratory, Hitachi, Ltd.
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Lee Young
Laboratory For Nanoelectronics And Spintronics Riec Tohoku Univ.
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Sasaki Ryutaro
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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Matsukura Fumihiro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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TAKAHASHI Hiromasa
Advanced Research Laboratory, Hitachi, Ltd.
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Meguro Toshiyasu
Laboratory For Nanoelectronics And Spintronics Riec Tohoku University
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Lee Young
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Sasaki Ryutaro
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Matsukura Fumihiro
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ikeda Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Meguro Toshiyasu
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Takahashi Hiromasa
Advanced Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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