Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
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概要
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In this paper, it is shown that our fabricated MTJ of 60×180nm2, which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14µm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with sampling period of 10nsec, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60×180nm2 MTJ is less than 30ns with its programming current of 500µA and the resistance change of 1.2kΩ.
著者
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KAMIYANAGI Masashi
CIR, Tohoku University
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IGA Fumitaka
CIR, Tohoku University
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IKEDA Shoji
RIEC, Tohoku University
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MIURA Katsuya
Hitachi Advanced Research Laboratory
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HAYAKAWA Jun
Hitachi Advanced Research Laboratory
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HASEGAWA Haruhiro
RIEC, Tohoku University
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HANYU Takahiro
RIEC, Tohoku University
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OHNO Hideo
RIEC, Tohoku University
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ENDOH Tetsuo
CIR, Tohoku University
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