FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG)

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概要

• 論文の詳細を見る
• 2012-05-01

著者

• ENDOH Tetsuo

  CIR, Tohoku University

• SEO Moon-Sik

  CIR, Tohoku University

関連論文

• Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
• Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
• Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
• Impact of Floating Body Type DRAM with the Vertical MOSFET
• The Optimum Physical Targets of the 3-Dimensional Vertical FG NAND Flash Memory Cell Arrays with the Extended Sidewall Control Gate (ESCG) Structure
• FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG)

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