TMR-Based Logic-in-Memory Circuit for Low-Power VLSI(<Special Section>Papers Selected from ITC-CSCC 2004)

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概要

• 論文の詳細を見る

• A tunneling magnetoresistive(TMR)-based logic-in-memory circuit, where storage functions are distributed over a logic-circuit plane, is proposed for a low-power VLSI system. Since the TMR device is regarded as a variable resistor with a non-volatile storage capability, any logic functions with external inputs and stored inputs can be performed by using the TMR-based resistor/transistor network. The combination of dynamic current-mode circuitry and a TMR-based logic network makes it possible to perform any switching operations without steady current, which results in power saving. A design example of an SAD unit for MPEG encoding is discussed, and its advantages are demonstrated.

• 社団法人電子情報通信学会の論文
• 2005-06-01

著者

• HANYU Takahiro

  Research Institute of Electrical Communication, Tohoku University

• HANYU Takahiro

  RIEC, Tohoku University

• 望月 明

  Research Institute Of Electrical Communication Tohoku University

• Hanyu Takahiro

  Riec Tohoku University

• Hanyu Takahiro

  Research Institute Of Electrical Communication Tohoku University

• MOCHIZUKI Akira

  Research Institute of Electrical Communication, Tohoku University

• KIMURA Hiromitsu

  Semiconductor Research and Development Headquarters, Rohm Co., Ltd.

• IBUKI Mitsuru

  Research Institute of Electrical Communication, Tohoku University

• Ibuki Mitsuru

  Research Institute Of Electrical Communication Tohoku University

• Mochizuki Akira

  The Research Institute Of Electrical Communication Tohoku University

• Kimura Hiromitsu

  Semiconductor Research And Development Headquarters Rohm Co. Ltd.

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