Modeling and Simulation on Degradation of Submicron NMOSFET Current Drive due to Velocity-Saturation Effects (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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概要

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• This paper describes modeling and simulation of submicron NMOSFET current drive focusing on carrier velocity-saturation effects. A new simple analytical model is proposed which predicts a significant degradation of drain current in sub-and quarter-micron NMOSFET's. Numerical two-dimensional simulations clarify that the degradation is namely caused by high lateral electric field along the channel, which leads to deep velocity-saturation of channel electrons even at the source end. Experimental data of NMOSFET's, with gate oxide thickness (T_<ox>) of 9-20 nm and effective channel lengths (L_<eff>) of 0.35-3.0 μm, show good agreement with the proposed model. It is found that the maximum drain current at the supply voltage of V_<dd>=3.3 V is predicted to be proportional to L_<eff>^<0.54> in submicron NMOSFET's, and this is verified with experiments.

• 社団法人電子情報通信学会の論文
• 1994-02-25

著者

• Sato Hiromi

  Riken

• Sato H

  Riken

• Masuda Hiroo

  Renesas Technology Corp.

• SATO Hisako

  Hitachi, Ltd.

• TSUNENO Katsumi

  Hitachi, Ltd.

• MASUDA Hiroo

  Hitachi, Ltd.

• Tsuneno Katsumi

  Hitachi Ltd.

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