Heat Treatment and Steaming Effects of Silicon Oxide upon Electron Dissipation on Silicon Oxide Surface
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概要
- 論文の詳細を見る
We investigated heat treatment and steaming effects of silicon oxide upon the surface dissipation of contact electrified electrons. As a result, we found that the surface diffusion of densely contact-electrified electrons on the silicon oxide surface becomes slower due to the removal of the adsorbed water layer on a silicon oxide layer by means of heat treatment, while it is enhanced by the steamed water layer. From the heat treatment and steaming effects upon the clissipation process, we concluded that the stable state of densely contact-electrified electrons becomes more stable upon removal of the water layer.
- 社団法人応用物理学会の論文
- 1994-08-01
著者
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SUGAWARA Yasuhiro
Department of Applied Physics, Graduate School of Engineering, Osaka University
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Sugawara Yasuhiro
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Uchihashi Takayuki
Department of Physics, Kanazawa University
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Okada T
Joint Research Center For Atom Technology (jrcat)
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OKUSAKO Takahiro
Department of Physics, Faculty of Science, Hiroshima University
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MORITA Seizo
Department of Physics, Faculty of Science, Hiroshima University
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Ohta Takayuki
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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YAMANISHI Yoshiki
Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd.
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OASA Takahiko
Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd.
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Uchihashi Takayuki
Jrcat-angstrom Technology Partnership (atp)
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Uchihashi Takayuki
Department Of Mathematics And Physics Grad School Of Natural Science And Technology Kanazawa Univ.
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Morita Seizo
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Yamanishi Yoshiki
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
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Uchihashi Takayuki
Joint Research Center For Atom Technology(jrcat) Angstrom Technology Partnership
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Sugawara Yasuhiro
Deparment Of Electrical Engineering Faculty Of Engineering Tohoku University
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