Charge Dissipation on Chemically Treated Thin Silicon Oxide in Air
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概要
- 論文の詳細を見る
We studied the microscopic charge dissipation of densely contact-electrified charges on silicon oxides with and without a trimethylsilyl (TMS) organosilane monolayer using a modified atomic force microscope in air. Here, the TMS film was used to change a hydrophilic surface to a hydrophobic one. As a result, for both of the deposited negative and positive charges, it was clarified that the TMS film can suppress the rapid dissipation induced by surface diffusion. For the positive charge, however, the TMS film enhanced the charge dissipation induced by recombination through the TMS film and silicon oxide.
- 1997-06-15
著者
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ANDOH Yasuko
NTT Integrated Information & Energy Systems Laboratories
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KANEKO Reizo
Department of Opto-Mechatronics, Faculty of Systems Engineering, Wakayama University
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Uchihashi Takayuki
Department Of Mathematics And Physics Grad School Of Natural Science And Technology Kanazawa Univ.
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Nakano Akihiko
Vlsi Development Laboratories Ic Group Sharp Corporation
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Morita Seizo
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Ida Tohru
Vlsi Development Laboratories Ic Group Sharp Corporation
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Sugawara Yasuhiro
Deparment Of Electrical Engineering Faculty Of Engineering Tohoku University
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Sugawara Yasuhiro
Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamada-Oka, Suita 565, Japan
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Andoh Yasuko
NTT Integrated Information & Energy Systems Laboratories, 3-9-11 Midori-Cho, Musashino-shi, Tokyo 180, Japan
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Morita Seizo
Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamada-Oka, Suita 565, Japan
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Ida Tohru
VLSI Development Laboratories, IC Group, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632, Japan
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Nakano Akihiko
VLSI Development Laboratories, IC Group, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632, Japan
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