Scanning Force/Tunneling Microscopy as a Novel Technique for the Study of Nanometer-Scale Dielectric Breakdown of Silicon Oxide Layer
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概要
- 論文の詳細を見る
Scanning force/tunneling microscopy (AFM/STM) was proposed as a novel technique to investigate local dielectric breakdown voltage for the silicon oxide layer. It was manifested that this novel technique could simultaneously measure surface topography and distribution of dielectric breakdown voltage with nanometer-scale resolution. We confirmed that the dielectric breakdown voltage measured with the AFM/STM increased monotonously with the increase in oxide thickness. In addition to the above results, we observed that the oxide layer with visible defect had a lower dielectric breakdown voltage.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Okada T
Joint Research Center For Atom Technology (jrcat)
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FUKANO Yoshinobu
Department of Physics, Faculty of Science, Hiroshima University
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YAMANISHI Yoshiki
Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd.
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OASA Takahiko
Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd.
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Morita Seizo
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Yamanishi Yoshiki
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
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Fukano Y
Department Of Physics Faculty Of Science Hiroshima University
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Sugawara Yasuhiro
Deparment Of Electrical Engineering Faculty Of Engineering Tohoku University
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