KATO Takamasa | Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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概要
- Kato Takamasaの詳細を見る
- 同名の論文著者
- Department of Electronic Engineering, Faculty of Engineering, Yamanashi Universityの論文著者
関連著者
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KATO Takamasa
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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Kato Takamasa
Department Of Electrical Engineering Yamanashi University
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Matsumoto Takashi
Department of Gynecologic Oncology, Shikoku Cancer Center
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Ishida Tetsuro
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Sciences, University of Tokushima
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Science, University of Tokushima
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Matsumoto T
Osaka Univ. Osaka
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ISHIDA Tetsuro
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
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KATO Takamasa
Faculty of Engineering, Yamanashi University
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Kato T
Shizuoka Univ. Hamamatsu Jpn
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Ishida T
Mitsubishi Electric Corp. Hyogo Jpn
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Kato T
Faculty Of Engineering Yamanashi University
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Ishida Toshio
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University:(present Addres
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HOSOKI Mitsuru
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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Kato Takamasa
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Shimizu Azuma
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Shimizu Azuma
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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Hosoki Mitsuru
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Shimizu Azuma
Department of Electrical and Electronic Engineering, Faculty of Engineering, University of Yamanashi
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Yoshioka Yasuhiro
Department of Pharmacotherapeutics, Faculty of Pharmaceutical Sciences, Setsunan University, Japan
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Kato Takayoshi
Reseach Institute Of Electronics Shizuoka University
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Kato T
Graduate School Of Engineering Nagoya University
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Kato Takayoshi
Research Institute Of Electronics Shizuoka University
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KOBATAKE Takaaki
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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KOBAYASHI Masaya
Department of Electronic Enginnering, Faculty of Engineering, Yamanashi University
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Koshikawa Takanori
Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communic
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Kato T
Ashikaga Inst. Technol. Tochigi
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Kato T
Optoelectronics Technology Research Lab. Ibaraki
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Yoshioka Yasuhiro
Department Of Electronic Enginnering Faculty Of Engineering Yamanashi University:(present Address)cl
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Kobayashi Masaya
Department Of Electronic Enginnering Faculty Of Engineering Yamanashi University
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Nabetani Yoichi
Department Of Electrical Engineering Yamanashi University
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Kondo T
Graduate School Of Science Nagoya University
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Nakazawa Yoko
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University:(present Address)pi
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ISHIBE Isao
Department of Electrical Engineering, Yamanashi University
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SUGIYAMA Kazuki
Department of Electrical Engineering, Yamanashi University
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Ishibe Isao
Department Of Electrical Engineering Yamanashi University
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Sugiyama Kazuki
Department Of Electrical Engineering Yamanashi University
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Matsumoto Takashi
Department Of Electrical Engineering Yamanashi University
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Matsumoto Takashi
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Yoshioka Yasuhiro
Department of Chemistry, Faculty of Science, The University of Tokyo
著作論文
- Raman Spectral Behavior of In_Ga_xP (0
- Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates
- Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region
- Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region
- Photoluminescence of InGaP/GaAs (111) LPE Layers with Elastic Strain due to Lattice Mismatch
- Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
- Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth
- LPE Growth of In_Ga_xAs_P_y with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
- Photoluminescence Processes of Zn-Doped In_Ga_xP with 0.6
- Electrical Properties of Zn-Doped In_Ga_xP
- Luminescence of Zn Diffused In_ ,Ga_xP in the Direct Transition Region
- Near-Bandgap Photoluminescence in Te-Doped In_Ga_xP (0.2≲x≲0.5)
- Optical Investigation of Critical Thickness and Interface Fluctuation in CdSe/ZnSe Strained Layer Superlattices Grown on InP
- Estimation of Grown Layer Thickness by Cathodoluminescence Measurement
- Temperature Dependence of Carrier Concentration, Resistivity, and Hall Mobility in Te-Doped In_Ga_xP
- Hall Mobility of Te-Doped In_Ga_xP at 300 K