Temperature Dependence of Carrier Concentration, Resistivity, and Hall Mobility in Te-Doped In_<1-x>Ga_xP
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-10-05
著者
-
KATO Takamasa
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
-
Kato Takamasa
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
-
Ishida Tetsuro
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
-
Kato Takamasa
Department Of Electrical Engineering Yamanashi University
-
Shimizu Azuma
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
-
Shimizu Azuma
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
-
Shimizu Azuma
Department of Electrical and Electronic Engineering, Faculty of Engineering, University of Yamanashi
関連論文
- Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH_4 Plasmas
- Raman Spectral Behavior of In_Ga_xP (0
- Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates
- Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region
- Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region
- Photoluminescence of InGaP/GaAs (111) LPE Layers with Elastic Strain due to Lattice Mismatch
- Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
- Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth
- LPE Growth of In_Ga_xAs_P_y with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
- Photoluminescence Processes of Zn-Doped In_Ga_xP with 0.6
- Electrical Properties of Zn-Doped In_Ga_xP
- Luminescence of Zn Diffused In_ ,Ga_xP in the Direct Transition Region
- Near-Bandgap Photoluminescence in Te-Doped In_Ga_xP (0.2≲x≲0.5)
- Temperature Dependence of the Photoluminescence of Porous Silicon
- Optical Investigation of Critical Thickness and Interface Fluctuation in CdSe/ZnSe Strained Layer Superlattices Grown on InP
- Analysis of Output Power Degradation for Tunnel Metal-Insulator-Semiconductor Solar Cell
- Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
- Application of a Junction Field Effect Transistor Structure to a Low Loss Diode
- Improvement of Open Circuit Voltage of SnO_2-nSi Solar Cells
- Application of a Junction FET Structure to a Low Loss Diode
- Quality Variation of ZnSe Heteroepitaxial Layers Correlated with Nonuniformity in the GaAs Substrate Wafer : Semiconductors and Semiconductor Devices
- Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer thickness and Growth Temperature : Semiconductors and Semiconductor Devices
- Electrical and Luminescent Properties of In-Doped ZnSe Grown by Low-Pressure Vapor-Phase Epitaxy
- Estimation of Grown Layer Thickness by Cathodoluminescence Measurement
- Interface States in n-ZnSe/n-GaAs Heterostrueture Characterized by Deep Level Transient Spectroscopy Technique
- ZnO Green Light Emitting Diode
- Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF4 Plasmas
- Solution Growth of CuGaS_2 Using In as a Solvent under Controlled S Vapor Pressure
- New Epitaxial Relationships of Single-Crystal Zinc Oxide on Sapphire
- Structural Properties of Epitaxial ZnS on Ge Substrates
- Temperature Dependence of Carrier Concentration, Resistivity, and Hall Mobility in Te-Doped In_Ga_xP
- Hall Mobility of Te-Doped In_Ga_xP at 300 K
- Toward Epitaxial Growth of CuGaS_2 on GaAs(001) Substrates by Chloride Chemical Vapor Deposition
- Low Pressure Vapor Phase Epitaxy of High Purity ZnSe Using Metallic Zinc and Selenium as Source Materials
- Growth of High-Quality ZnSe Layers in Hydrogen Plasma
- Chloride Multi-Source Epitaxial Growth of CuGaS_2 and CuGaSe_2
- Vapor Phase Epitaxial Growth of ZnSe Using Zinc and Selenium as Source Materials
- Anisotropy of Photovoltaic Properties of Au-CdSnP_2 Diodes : III-1: II-VI COMPOUND SOLAR CELLS
- Chemical Vapor Deposition of CuGaS_2 Using Chloride Sources
- Epitaxial Growth of ZnS by Zn-S-H_2 CVD Method
- Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH4 Plasma with Ar, N2, and H2 Dilution Gases
- Main Electron Traps in In1-xGaxP ($0.12{\le}x{\le}0.96$)