Chemical Vapor Deposition of CuGaS_2 Using Chloride Sources
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概要
- 論文の詳細を見る
The chemical vapor deposition of CuGaS_2 using CuCl, GaCl_3 and S sources and N_2 carrier gas has been studied for the first time. The synthesized deposits are characterized by an X-ray diffraction method and confirmed to be CuGaS_2 with chalcopyrite structure. CuGaS_2 layers are grown on GaAs(111) substrates at 〜700℃ and show green luminescence due to donor-acceptor pair recombinations at 2.299 eV at 4.2 K.
- 社団法人応用物理学会の論文
- 1987-08-20
著者
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Ishida Tetsuro
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Nakanishi Hiroshi
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University:(present Address) Sanken Electric Co. Ltd.
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Nakanishi Hiroshi
Department Of Biological Science And Technology Tokyo University Of Science
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Nakanishi Hiroshi
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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