Short-Circuit Destruction of Field-Stop-Structure Inslated Gate Bipolar Transistor
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概要
- 論文の詳細を見る
Numerical and experimental results of the field stop (FS) and lifetime control (LC) IGBT short-circuit characteristics using 4500 V-class devices are described. During the short-circuit condition, avalanche breakdown occurs along the base/FS layer interface. This is because the strength of the electric field becomes high due to the increase in the majority carrier concentration, which is larger than the impurity concentration in the base layer. The lower current gain in the device results in a higher electric field. It can be concluded that FS-IGBT has a narrower short circuit safety operating area (SCSOA) than other devices. Particularly, this phenomenon is easy to show on the high-voltage-class device, such as a 4.5 kV IGBT, because its impurity concentration in the base layer is low.
- 2004-09-15
著者
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Nishiura Akira
Fuji Electric Device Technology Co. Ltd.
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Nishiura Akira
Fuji Electric Device Technology Corporation Ltd., 4-13-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Yoshikawa Koh
Fuji Electric Advanced Technology Corporation Ltd., 4-13-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Koga Takeru
Fuji Electric Advanced Technology Corporation Ltd., 4-13-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Fujii Takeshi
Fuji Electric Advanced Technology Corporation Ltd., 4-13-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Matsuda Akinori
Fuji Electric Advanced Technology Corporation Ltd., 4-13-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Koga Takeharu
Fuji Electric Advanced Technology Corporation Ltd., 4-13-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Matsumoto Takashi
Department of Electrical Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Sciences, University of Tokushima
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